Everspin MRAM是一種具有革命性的存儲器，其原理是利用電子自旋的磁性結構，來提供不會產生損耗的非揮發特性。Everspin MRAM可在集成了硅電路的磁性材料中存儲信息，以在單一、可無限使用的組件中提供SRAM的速度以及閃存的非揮發特性。Everspin是從飛思卡爾半導體公司分離出來的一家獨立公司。2006年，Everspin推出業界第一款商業化MRAM產品。今日，Everspin MRAM已廣泛用在數據存儲、工業自動化、游戲、能源管理、通訊、運輸、和航空電子領域。 The ES1GB-U201 is a U.2 form factor NVMe card based on Everspin’s STT-MRAM products and Simultaneous Block mode (NVMe) and Byte Mode (PCIe Direct Memory Access). They offer extremely low and predictable latency and are power fail safe without system support requirements.
| Highlights | Applications |  |
| • 1GB Storage Capacity | • Power Fail Safe Data & Metadata Cache/Buffer | |
| • PCIe Gen3 x4 | • Burst Data Deserializer | |
| • U.2 2.5” form factor | • Database and Application Accelerators | |
| • NVMe 1.1+ in block mode | • Storage Accelerator For All Flash Storage | |
| • Memory mapped IO (MMIO) in byte mode | Array (FSA) | |
| • Ultra-low access latency (uS) | • File System Accelerator (Parallel & Serial) | |
| • Consistent latency (short tail) | • Power Fail Safe Software Defined Storage | |
| • Customer defined features using own RTL | • Power Fail Safe Software And NVMe RAID | |
| with programmable FPGA | • OLTP Log Cache Acceleration | |
| • Development license for NVMe core IP | • Storage Fabric (Network) Accelerators | |
| • Shared Remote Persistent Memory |
